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QS8J12TCR

¥2.65
FET、MOSFET 陣列

MOSFET 2P-CH 12V 4.5A TSMT8

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs29mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 6V
Power - Max550mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 QS8J12TCR

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