UT6JE5TCR
￥4.46
-100V 1.0A, DUAL PCH+PCH, DFN202
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 840mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 50V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-PowerUDFN |
| Supplier Device Package | HUML2020L8 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 UT6JE5TCR
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