| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Power - Max | 650mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SP8M70TB1
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