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SH8MA3TB1

¥7.27
FET、MOSFET 陣列

SH8MA3TB1 IS LOW ON-RESISTANCE A

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 6A (Ta)
Rds On (Max) @ Id, Vgs28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V, 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V, 480pF @ 15V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新聞資訊

ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SH8MA3TB1

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