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EM6K31GT2R

¥2.66
FET、MOSFET 陣列

MOSFET 2N-CH 60V 0.25A EMT6

參數(shù)名稱參數(shù)值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C250mA
Rds On (Max) @ Id, Vgs2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds15pF @ 25V
Power - Max120mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 EM6K31GT2R

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