| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 0.9V Drive |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 10V |
| Power - Max | 120mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 EM6K34T2CR
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