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SP8K1FRATB

¥9.65
FET、MOSFET 陣列

30V NCH+NCH POWER MOSFET - SP8K1

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 10V
Power - Max1.4W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新聞資訊

ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 SP8K1FRATB

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