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IXTD2N60P-1J

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單 FET、MOSFET
Littelfuse

MOSFET N-CH 600V 2A DIE

參數(shù)名稱參數(shù)值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package/ CaseDie

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Littelfuse 單 FET、MOSFET 產(chǎn)品 IXTD2N60P-1J

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