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2SK3019TL

¥2.74
單 FET、MOSFET

MOSFET N-CH 30V 100MA EMT3

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100μA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13 pF @ 5 V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageEMT3
Package/ CaseSC-75, SOT-416

新聞資訊

ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 2SK3019TL

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