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RZM001P02T2L

¥1.87
單 FET、MOSFET

MOSFET P-CH 20V 100MA VMT3

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs3.8Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100μA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 10 V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVMT3
Package/ CaseSOT-723

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RZM001P02T2L

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